Semiconductor Wafer, Inc. ( SWI ) provides InAs wafer ( Indium Arsenide ) to  
optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound  
formed by 6N pure In and As element and is grown by Liquid Encapsulated    
Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high    
uniformity of electrical parameters and low defect density , suitable for MBE   
or MOCVD epitaxial growth . We have “epi ready ” InAs products with wide    
choice in exact or off orientation , low or high doped concentration and            
surface finish . Please contact us for more information .                                      
                                                                                                                      

Typical Electrical Properties
Dopant available	S	Zn	Undoped
Type of conductivity	N	P	P
Concentration ( cm -3 )	1E17 - 3E18	1E17 - 5E18	x
Hall Mobility ( cm2 / v.s. )	10000 - 25000	100 - 500	> 20000

Standard Specification
Growth method	LEC
Diameter ( mm )	50.8
Thickness ( um )	500 +/-25 um
Conductivity	Semi-conducting
Orientation	<100> , <111> , <110>
Off orientation	From 2° to 10° off
Flat options	EJ or US SEMI. Std .
Surface finish	One side or two sides polished
EPD ( cm-2)	< 15000 or < 50000
Grade	Epi polished grade , mechanical grade
Package method	Single wafer container with outer foil bag