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Semiconductor Wafer, Inc. ( SWI ) provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more information . |
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Typical Electrical Properties |
Dopant available |
S |
Zn |
Undoped |
Type of conductivity |
N |
P |
P |
Concentration ( cm -3 ) |
1E17 - 3E18 |
1E17 - 5E18 |
x |
Hall Mobility ( cm2 / v.s. ) |
10000 - 25000 |
100 - 500 |
> 20000 |
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Standard Specification |
Growth method |
LEC |
Diameter ( mm ) |
50.8 |
Thickness ( um ) |
500 +/-25 um |
Conductivity type |
Semi-conducting |
Orientation |
<100> , <111> , <110> |
Off orientation |
From 2° to 10° off |
Flat options |
EJ or US SEMI. Std . |
Surface finish |
One side or two sides polished |
EPD ( cm-2) |
< 15000 or < 50000 |
Grade |
Epi polished grade |
Package method |
Single wafer container with outer foil bag |
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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