Semiconductor Wafer Inc

 

 

Quartz Wafer

 

Semiconductor Wafer Inc is a leading supplier of high quality clear quartz     
substrate , including fused silica wafer and fused quartz wafer in UV grade , 
optical grade and semiconductor grade .These quartz wafer are produced   
by flame fused and electrically fused technique , due to it's high purity, low     
thermal expansion , high tensile strength , high optical transmission and        
unique electrical properties , SWI quartz wafer is suitable for a wide range   
of laboratory use and high-tech semiconductor process application ,              
Contact us for further information on price & delivery time .                               

 

Quartz Wafer Application :

• Photo mask blank
• Sensors
• High frequency circuit ( Microwave circuit )
• Biotech arrays
• Laser Optics
• Optical windows and lenses
                                                                                  

Quartz Wafer Feature :

• High working temperature
• Good thermal conductivity
• High stability
• High anti corrosion
• Superior mechanical properties
• Stable dielectric constant & low dielectric loss
• High optical transmission
 

Purity Level 99.999 % SiO2 Quartz Wafer

Diameter
1” , 2" , 3" , 4", 5", 6", 8" 

Thickness

0.5 mm , 1 mm , 2 mm , 3 mm , 4 mm

Surface finish

one side or two sides polished

Flat

One flat as SEMI. Std.

TTV

<= 20 um

Surface roughness

Ra <= 15 A

 

Mechanical Properties

Density

2.2 g / cm3

Pressure-proof Intensity

1100 Mpa

Anti-curving Intensity

67 Mpa

Anti-pull Intensity

48 Mpa

Poisson's ratio

0.14 ~ 0.17

Young's modulus

72000 Mpa

Rigidity modulus

31000 Mpa

Moh's hardness

5.5 ~ 6.5

Thermal Properties

Transformation point

1120 °C

Softening point

1680 °C

Annealing point

1210 °C

Specific heat ( 20 ~ 350 °C )

670 J / kg °C

Thermal conductivity ( 20 °C )

1.4 W / m °C

Thermal expansion coefficient

5.5×10 -7 cm / cm °C

Thermal processing temperature

1700 ~ 2000 °C

Short-term operating temperature

1300 °C

Long-term operating temperature

1100 °C

Electrical Properties

Resistivity

7×10 7 ohm-cm

Insulating strength

250 ~ 400 Kv / cm

Dielectric constant e

3.7~ 3.9

Dielectric absorption coefficient.

< 4×10 4

Dielectric waste coefficient.

< 1×10 4

Optical Properties

Refractive index ( @ 589 nm )

Nd =1.4584

What's the difference ?

Fused silica wafer

( Synthetic silica )

Fused quartz wafer

( Natural silica )

• High OH content >1200
• Excellent optical properties
• Higher transmission in the UV range.
• Free bubbles , inclusions and contaminants.
• Very low fluorescence
• Impurity 5 ppm

 

• Low OH content > 150
• Excellent thermal properties
• Contain some bubbles , inclusions and contaminants
• High fluorescence
• Impurity 20 ~ 40 ppm

 

 

Optical Transmission %

Compared to fused quartz , fused silica wafer has excellent UV transmission ranging from 190 nm to 2500 nm

Wave length

( nm )

Fused silica wafer

( Synthetic silica )

Fused quartz wafer

( Natural silica )

190

86.42

73.84

200

86.88

75.16

210

88.51

79.90

220

89.09

85.69

230

89.58

87.57

240

89.90

87.58

250

90.12

88.64

260

90.46

90.11

280

90.89

90.82

300

91.14

91.15

350

91.49

91.45

400

91.72

91.75

500

92.08

91.99

750

92.26

92.32

1000

92.52

92.48

2000

93.25

93.48

2500

91.58

93.56

 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Semiconductor Wafer, Inc.