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Semiconductor Wafer Inc is a leading supplier of high quality clear quartz substrate , including fused silica wafer and fused quartz wafer in UV grade , optical grade and semiconductor grade .These quartz wafer are produced by flame fused and electrically fused technique , due to it's high purity, low thermal expansion , high tensile strength , high optical transmission and unique electrical properties , SWI quartz wafer is suitable for a wide range of laboratory use and high-tech semiconductor process application , Contact us for further information on price & delivery time . |
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| Quartz Wafer Application |
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• Photo mask blank
• Sensors
• High frequency circuit ( Microwave circuit )
• Biotech arrays
• Laser Optics
• Optical windows and lenses
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| Quartz Wafer Feature |
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• High working temperature
• Good thermal conductivity
• High stability
• High anti corrosion
• Superior mechanical properties
• Stable dielectric constant & low dielectric loss
• High optical transmission
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Purity Level 99.999 % SiO2 Quartz Wafer |
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Diameter |
1" , 2" , 3" , 4", 5", 6", 8" |
| Thickness |
0.5 mm , 1 mm , 2 mm , 3 mm , 4 mm |
| Surface finish |
one side or two sides polished |
| Flat |
One flat as SEMI. Std. |
| TTV |
<= 20 um |
| Surface roughness |
Ra <= 15 A |
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Mechanical Properties |
Density |
2.2 g / cm3 |
Pressure-proof Intensity |
1100 Mpa |
Anti-curving Intensity |
67 Mpa |
Anti-pull Intensity |
48 Mpa |
Poisson's ratio |
0.14 ~ 0.17 |
Young's modulus |
72000 Mpa |
Rigidity modulus |
31000 Mpa |
Moh's hardness |
5.5 ~ 6.5 |
Thermal Properties |
Transformation point |
1120 °C |
Softening point |
1680 °C |
Annealing point |
1210 °C |
Specific heat ( 20 ~ 350 °C ) |
670 J / kg °C |
Thermal conductivity ( 20 °C ) |
1.4 W / m °C |
Thermal expansion coefficient |
5.5×10 -7 cm / cm °C |
Thermal processing temperature |
1700 ~ 2000 °C |
Short-term operating temperature |
1300 °C |
Long-term operating temperature |
1100 °C |
| Electrical Properties |
Resistivity |
7×10 7 ohm-cm |
Insulating strength |
250 ~ 400 Kv / cm |
Dielectric constant e |
3.7~ 3.9 |
Dielectric absorption coefficient. |
< 4×10 4 |
Dielectric waste coefficient. |
< 1×10 4 |
Optical Properties |
Refractive index ( @ 589 nm ) |
Nd =1.4584 |
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What's the difference ? |
| Fused silica wafer ( Synthetic silica ) |
Fused quartz wafer ( Natural silica ) |
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• High OH content >1200
• Excellent optical properties
• Higher transmission in the UV range.
• Free bubbles , inclusions and contaminants.
• Very low fluorescence
• Impurity 5 ppm
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• Low OH content > 150
• Excellent thermal properties
• Contain some bubbles , inclusions and contaminants
• High fluorescence
• Impurity 20 ~ 40 ppm
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| Optical Transmission %
Compared to fused quartz , fused silica wafer has excellent UV transmission ranging from 190 nm to 2500 nm |
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Wave length
( nm )
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Fused silica wafer
( Synthetic silica )
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Fused quartz wafer
( Natural silica )
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190 |
86.42 |
73.84 |
200 |
86.88 |
75.16 |
210 |
88.51 |
79.90 |
220 |
89.09 |
85.69 |
230 |
89.58 |
87.57 |
240 |
89.90 |
87.58 |
250 |
90.12 |
88.64 |
260 |
90.46 |
90.11 |
280 |
90.89 |
90.82 |
300 |
91.14 |
91.15 |
350 |
91.49 |
91.45 |
400 |
91.72 |
91.75 |
500 |
92.08 |
91.99 |
750 |
92.26 |
92.32 |
1000 |
92.52 |
92.48 |
2000 |
93.25 |
93.48 |
2500 |
91.58 |
93.56 |
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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