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Semiconductor Wafer, Inc. provides 3 ~ 5 compound semiconductor wafer to
microelectronics ( HEMT / HBT ) and optoelectronics industry ( LD / LED
3 ~ 5 compound wafer are compounds formed by elements from 3 & 5 group of
the periodic table. Due to its unique electronic and thermal properties, 3 ~ 5
group wafer are next - generation substrate suitable for epitaxial growth
application . We have complete product line and can offer you a wide range of
products with quick delivery time and competitive price .
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3 ~ 5 Group Compound Wafer
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Gallium Arsenide ( GaAs )
Gallium Phosphide ( GaP )
Gallium Antimonide ( GaSb )
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Indium Arsenide ( InAs )
Indium Phosphide ( InP )
Indium Antimonide ( InSb )
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Standard Specification
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| Wafer |
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GaP
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GaSb
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InAs
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InP
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InSb
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| Diameter |
2"~ 6"
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2"
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2"
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2"
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2"~3"
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2"
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| Thickness ( um ) |
350
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500
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500
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500
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350
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500
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| Conductivity |
Semi-conducting or Semi-insulating
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| Conductivity type |
P - type or N - type
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| Dopant available |
Silicon , Sulphure , Tellurium , Zinc , Undoped
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| Orientation |
<100> , <111>
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| Off orientation |
From 2° to 10° off
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| Surface finish |
one side or two sides polished
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| Grade |
Epi polished grade , mechanical grade
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| Package method |
Single wafer container with outer foil bag
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Semi-insulating or Semi-conducting .
High uniformity of electrical parameters .
Excellent surface quality for epitaxial growth .
Non-standard specifications are available upon request .
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