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Semiconductor Wafer, Inc. provides 3 ~ 5 compound semiconductor wafer to microelectronics ( HEMT / HBT ) and optoelectronics industry ( LD / LED 3 ~ 5 compound wafer are compounds formed by elements from 3 & 5 group of
the periodic table. Due to its unique electronic and thermal properties, 3 ~ 5 group wafer are next - generation substrate suitable for epitaxial growth application . We have complete product line and can offer you a wide range of products with quick delivery time and competitive price . |
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3 ~ 5 Group Compound Wafer |
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Gallium Arsenide ( GaAs )
Gallium Phosphide ( GaP )
Gallium Antimonide ( GaSb ) |
Indium Arsenide ( InAs )
Indium Phosphide ( InP )
Indium Antimonide ( InSb ) |
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Standard Specification |
Wafer |
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GaP |
GaSb |
InAs |
InP |
InSb |
Diameter |
2"~ 6" |
2" |
2" |
2" |
2"~3" |
2" |
Thickness ( um ) |
350 |
500 |
500 |
500 |
350 |
500 |
| Conductivity |
Semi-conducting or Semi-insulating
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Conductivity type |
P - type or N - type |
| Dopant available |
Silicon , Sulphure , Tellurium , Zinc , Undoped |
Orientation |
<100> , <111> |
Off orientation |
From 2° to 10° off |
Surface finish |
one side or two sides polished |
Grade |
Epi polished grade , mechanical grade |
| Package method |
Single wafer container with outer foil bag |
1. Semi-insulating or Semi-conducting .
2. High uniformity of electrical parameters .
3. Excellent surface quality for epitaxial growth .
4. Non-standard specifications are available upon request .
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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