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3
~ 5 Group
Wafer
Semiconductor
Wafer, Inc. provides
3 ~ 5 compound
semiconductor
wafer to
microelectronics
( HEMT / HBT
) and optoelectronics
industry (
LD / LED ).
3
~ 5 compound
wafer are compounds
formed by elements
from
3 & 5 group of
the
periodic table.
Due to its
unique electronic
and thermal
properties,
3 ~ 5
group
wafer are next
- generation
substrate suitable
for epitaxial
growth
application
. We have
complete product
line and can
offer you a
wide range of
products
with quick
delivery time
and competitive
price .
3
~ 5 Group Compound
Wafer
|
Gallium
Arsenide (
GaAs )
Gallium
Phosphide (
GaP )
Gallium
Antimonide
( GaSb )
|
Indium
Arsenide (
InAs )
Indium
Phosphide (
InP )
Indium
Antimonide
( InSb )
|
Standard
Specification
& Tolerance
| Wafer |
|
GaP
|
GaSb
|
InAs
|
InP
|
InSb
|
| Diameter |
2"~
6"
|
2"
|
2"
|
2"
|
2"~3"
|
2"
|
| Thickness
( um ) |
500
|
500
|
500
|
500
|
500
|
500
|
| Conductivity |
Semi-conducting
or Semi-insulating
|
| Conductivity
type |
P
- type or N
- type
|
| Dopant
available |
Silicon
, Sulphure
, Tellurium
, Zinc , Undoped
|
| Orientation |
<100> , <111>
|
| Off orientation |
From
2° to 10° off
|
| Surface
finish |
one
side or two
sides polished
|
| Grade |
Epi
polished grade
, mechanical
grade
|
| Package
method |
Single
wafer container
with outer
foil bag
|
Semi-insulating
or Semi-conducting
.
High
uniformity
of electrical
parameters
.
Excellent
surface quality
for epitaxial
growth .
Non-standard
specifications
are available
upon request
.
Compound
Epitaxial Wafer
Available :
|
GaAs
base epitaxial
wafer
- HBT
- HEMT
- PIN detector
- LD
- LED
|
|
InP
base epitaxial
wafer
- HBT
- HEMT
- PIN detector
- LD
- LED
|
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