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Semiconductor Wafer Inc. ( SWI ) provides III-V compound epitaxial and GaN
epitaxial wafer to electronics and optoelectronics industry .
GaAs based epitaxial wafer
InP based epitaxial wafer
GaN based epitaxial wafer
Epitaxial wafers are grown by MBE or MOCVD method , one layer or
multi-layer
structures on GaAs , InP or Sapphire substrates , diameter up to
3 inch , please
contact us for more product information or discuss a specific
epi layer structure .
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Electronics
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Optoelectronics
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HBT
PHEMT
MHEMT
GaAs-based
InP-based
Customized layer structures
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Photodetector --- PIN ( GaAs , InP )
QWIP
Laser diodes
LED
980nm pump laser
VCSEL
Customized layer structures
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| GaAs Based Epitaxial Wafer |
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LT-GaAs epi layer on GaAs substrate
GaAs epi layer on GaAs substrate
AlAs epi layer on GaAs substrate
InAs epi layer on GaAs substrate
GaAsP epi layer on GaAs substrate
AlGaAs epi layer on GaAs substrate
AlGaAs / InGaAs epi layer on GaAs substrate
InGaAlP / InGaAs epi layer on GaAs substrate
InGaP epi layer on GaAs substrate
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| InP Based Epitaxial Wafer |
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InP epi layer on InP substrate
InGaAs epi layer on InP substrate
InGaAsP epi layer on InP substrate
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| GaN Based Epitaxial Wafer |
| The following GaN epi layer on sapphire substrate are available :
• Undoped GaN
• n-GaN , Si-doped
• p-GaN , Mg-doped
GaN template can be used as an ideal substrate for III-V nitride epitaxial growth by MBE or MOCVD .
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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