III-V Compound Epitaxial Wafer - GaN Epi on Sapphire ( Gallium Nitride Epi Wafer )

Semiconductor Wafer Inc

Epitaxial Wafer

Semiconductor Wafer Inc. ( SWI ) provides III-V compound epitaxial and GaN
epitaxial wafer to electronics and optoelectronics industry .

GaAs based epitaxial wafer
InP based epitaxial wafer
GaN based epitaxial wafer

Epitaxial wafers are grown by MBE or MOCVD method , one layer or
multi-layer structures on GaAs , InP or Sapphire substrates , diameter up to
3 inch , please contact us for more product information or discuss a specific
epi layer structure .

Products
Electronics	Optoelectronics
HBT PHEMT MHEMT GaAs-based InP-based Customized layer structures	Photodetector --- PIN ( GaAs , InP ) QWIP Laser diodes LED 980nm pump laser VCSEL Customized layer structures

GaAs Based Epitaxial Wafer

LT-GaAs epi layer on GaAs substrate
GaAs epi layer on GaAs substrate
AlAs epi layer on GaAs substrate
InAs epi layer on GaAs substrate
GaAsP epi layer on GaAs substrate
AlGaAs epi layer on GaAs substrate
AlGaAs / InGaAs epi layer on GaAs substrate
InGaAlP / InGaAs epi layer on GaAs substrate
InGaP epi layer on GaAs substrate

InP Based Epitaxial Wafer

InP epi layer on InP substrate
InGaAs epi layer on InP substrate
InGaAsP epi layer on InP substrate

GaN Based Epitaxial Wafer

The following GaN epi layer on sapphire substrate are available :

• Undoped GaN
• n-GaN , Si-doped
• p-GaN , Mg-doped

GaN template can be used as an ideal substrate for III-V nitride epitaxial growth by MBE or MOCVD .

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Semiconductor Wafer, Inc.