Semiconductor Wafer Inc. ( SWI ) provides III-V compound epitaxial and GaN
epitaxial wafer to electronics and optoelectronics industry .
GaAs based epitaxial wafer
InP based epitaxial wafer
GaN based epitaxial wafer
Epitaxial wafers are grown by MBE or MOCVD method , one layer or
multi-layer
structures on GaAs , InP or Sapphire substrates , diameter up to
3 inch , please
contact us for more product information or discuss a specific
epi layer structure .