Semiconductor Wafer Inc

 

Epitaxial Wafer

Semiconductor Wafer Inc. ( SWI ) provides III-V compound epitaxial and GaN
epitaxial wafer to electronics and optoelectronics industry .                                

GaAs based epitaxial wafer
InP based epitaxial wafer
GaN based epitaxial wafer

Epitaxial wafers are grown by MBE or MOCVD method , one layer or
multi-layer structures on GaAs , InP or Sapphire substrates , diameter up to
3 inch , please contact us for more product information or discuss a specific
epi layer structure .

   
 
Products

Electronics

Optoelectronics

HBT
PHEMT
MHEMT
GaAs-based
InP-based
Customized layer structures
Photodetector --- PIN ( GaAs , InP )
QWIP
Laser diodes
LED
980nm pump laser
VCSEL
Customized layer structures
 
GaAs Based Epitaxial Wafer
LT-GaAs epi layer on GaAs substrate
GaAs epi layer on GaAs substrate
AlAs epi layer on GaAs substrate
InAs epi layer on GaAs substrate
GaAsP epi layer on GaAs substrate
AlGaAs epi layer on GaAs substrate
AlGaAs / InGaAs epi layer on GaAs substrate
InGaAlP / InGaAs epi layer on GaAs substrate
InGaP epi layer on GaAs substrate
 
InP Based Epitaxial Wafer

InP epi layer on InP substrate
InGaAs epi layer on InP substrate
InGaAsP epi layer on InP substrate

 
GaN Based Epitaxial Wafer
The following GaN epi layer on sapphire substrate are available :

• Undoped GaN
• n-GaN , Si-doped
• p-GaN , Mg-doped

GaN template can be used as an ideal substrate for III-V nitride epitaxial growth by MBE or MOCVD .
 
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Superior quality of products with reliance is our prime consideration.
Feel free to contact us if you need any other assistance about our products .
 
Email : sales.america@semiwafer.com
Email : sales.europe@semiwafer.com
Email : sales.asia@semiwafer.com
Email : sales.taiwan@semiwafer.com
Phone : +886-03-592-7585
Fax : +886-03-516-2843
 
 
 
 
 
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