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Semiconductor Wafer Inc. ( SWI ) provides single crystal GaAs wafer to
optoelectronics and microelectronics industry , in diameter range from
2" to 4 ". LEC and VGF are two main growth method providing the
widest choice of GaAs material . Gallium Arsenide can be supplied as
ingots and polished wafers, with two different conductive type --- semi-
conducting and semi-insulating . The epi-ready wafer is available for MOCVD
and MBE application . Contact us for more product information.
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GaAs Wafer Features : |
High mobility
High frequency
Low power consumption |
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GaAs Wafer Applications :
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Visible and infrared LED
Light emitting diodes
Laser diodes |
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Standard Specifications
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Growth method
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LEC or VGF
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Diameter ( mm )
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50.8
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76.2
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100
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Thickness ( um )
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350 ~ 625
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Conductivity
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Semi-conducting or Semi-insulating
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Conductivity type
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P - type or N - type
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Dopant available
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Silicon , Tellurium , Zinc , Undoped
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Orientation
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<100> , <111> , <110>
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Off orientation
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From 2° to 10° off
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Flat options
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EJ or US SEMI. Std .
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Surface finish
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One side or two sides polished
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Grade
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Epi polished grade , mechanical grade
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Package method
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Single wafer container with outer foil bag
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High uniformity of electrical parameters .
Excellent surface quality for epitaxial growth .
Non-standard specifications are available upon request .
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