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GaAs Wafer
Semiconductor
Wafer, Inc. provides
single crystal
GaAs wafer
to optoelect-
ronics
and microelectronics
industry in
diameter range
from 2" to
6 ". LEC and
VGF
are two main
growth method
providing the
widest choice
of GaAs material
.
Gallium Arsenide
can be supplied
as ingots and polished
wafers with two
different
conductive
type --- semi-conducting and
semi-insulating
. The epi-ready
wafer
is also available
for MOCVD and
MBE application
.
- GaAs
Wafer Feature
:
High
mobility
High
frequency
Low
power consumption
- GaAs
Wafer Application
:
Visible
and infrared
LED
Light
emitting diodes
Laser
diodes
Standard
Monocrystalline
GaAs Wafer :
| Growth
method |
LEC
or VGF
|
| Diameter
( mm ) |
50.8
|
76.2
|
100
|
150
|
| Thickness
( um ) |
350
~ 675
|
| Conductivity |
Semi-conducting
or Semi-insulating
|
| Conductivity
type |
P
- type or N
- type
|
| Dopant
available |
Silicon
, Tellurium
, Zinc , Undoped
|
| Orientation |
<100> , <111> ,
<110>
|
| Off orientation |
From
2° to 10° off
|
| Flat options |
EJ
or US SEMI.
Std .
|
| Surface
finish |
One
side or two
sides polished
|
| Grade |
Epi
polished grade
, mechanical
grade
|
| Package
method |
Single
wafer container
with outer
foil bag
|
High
uniformity
of electrical
parameters
.
Excellent
surface quality
for epitaxial
growth .
Non-standard
specifications
are available
upon request
.
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