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Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to
optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound
formed by 6N pure Ga and Sb element and is grown by L iquid Encapsulated
Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high
uniformity of electrical parameters and low defect density , suitable for MBE or
MOCVD epitaxial growth . We have “epi ready ” GaSb products with wide choice
in exact or off orientation , low or high doped concentration and surface finish .
Please contact us for more information .
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Typical Electrical Properties
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Dopant available
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Te
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Zn
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Undoped
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Type of conductivity
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N
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P
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P
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Concentration ( cm -3 )
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1E17 - 5E18
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2E17 - 4E18
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x
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Hall Mobility ( cm 2 / v.s. )
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2500 - 3500
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200 - 500
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600 - 700
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Standard Specifications
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Growth method
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LEC
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Diameter ( mm )
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50.8
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Thickness ( um )
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500 +/-25 um
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Conductivity
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Semi-conducting
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Orientation
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<100> , <111> , <110>
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Off orientation
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From 2° to 10° off
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Flat options
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EJ or US SEMI. Std .
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Surface finish
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One side or two sides polished
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EPD ( cm-2)
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< 1000 or < 10000
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Grade
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Epi polished grade , mechanical grade
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Package method
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Single wafer container with outer foil bag
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