Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to
optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound     
formed by 6N pure Ga and Sb element and is grown by L iquid Encapsulated       
Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high         
uniformity of electrical parameters and low defect density , suitable for MBE or     
MOCVD epitaxial growth . We have “epi ready ” GaSb products with wide choice
in exact or off orientation , low or high doped concentration and surface finish .     
Please contact us for more information .                                                                      
 

Typical Electrical Properties
Dopant available	Te	Zn	Undoped
Type of conductivity	N	P	P
Concentration ( cm -3 )	1E17 - 5E18	2E17 - 4E18	x
Hall Mobility ( cm 2 / v.s. )	2500 - 3500	200 - 500	600 - 700

Standard Specifications
Growth method	LEC
Diameter ( mm )	50.8
Thickness ( um )	500 +/-25 um
Conductivity	Semi-conducting
Orientation	<100> , <111> , <110>
Off orientation	From 2° to 10° off
Flat options	EJ or US SEMI. Std .
Surface finish	One side or two sides polished
EPD ( cm-2)	< 1000 or < 10000
Grade	Epi polished grade , mechanical grade
Package method	Single wafer container with outer foil bag