Semiconductor Wafer Inc

 

GaSb Wafer

Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by L iquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or  MOCVD epitaxial growth . We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and surface finish .Please contact us for more information .  
 
 
Typical Electrical Properties
Dopant available
Te
Zn
Undoped
Type of conductivity
N
P
P
Concentration ( cm -3 )
1E17 - 5E18
2E17 - 4E18
x
Hall Mobility ( cm 2 / v.s. ) 
2500 - 3500
200 - 500
600 - 700
 
Standard Specifications
Growth method
LEC
Diameter ( mm )
50.8
Thickness ( um )
500 +/-25 um
Conductivity
Semi-conducting
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
EPD ( cm-2)
< 1000 or < 10000
Grade
Epi polished grade , mechanical grade
Package method
Single wafer container with outer foil bag
 
 
Superior quality of products with reliance is our prime consideration.
Feel free to contact us if you need any other assistance about our products .
 
Email : sales.america@semiwafer.com
Email : sales.europe@semiwafer.com
Email : sales.asia@semiwafer.com
Email : sales.taiwan@semiwafer.com
Phone : +886-03-592-7585
Fax : +886-03-516-2843
 
 
 
 
 
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