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Semiconductor Wafer, Inc. ( SWI ) provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by L iquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and surface finish .Please contact us for more information . |
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Typical Electrical Properties |
Dopant available |
Te |
Zn |
Undoped |
Type of conductivity |
N |
P |
P |
Concentration ( cm -3 ) |
1E17 - 5E18 |
2E17 - 4E18 |
x |
Hall Mobility ( cm 2 / v.s. ) |
2500 - 3500 |
200 - 500 |
600 - 700 |
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Standard Specifications |
Growth method |
LEC |
Diameter ( mm ) |
50.8 |
Thickness ( um ) |
500 +/-25 um |
Conductivity |
Semi-conducting |
Orientation |
<100> , <111> , <110> |
Off orientation |
From 2° to 10° off |
Flat options |
EJ or US SEMI. Std . |
Surface finish |
One side or two sides polished |
EPD ( cm-2) |
< 1000 or < 10000 |
Grade |
Epi polished grade , mechanical grade |
Package method |
Single wafer container with outer foil bag |
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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