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Semiconductor Wafer Inc.(SWI ) provides germanium wafer ( Ge wafer ) to
micro- electronics and optoelectronics industry in diameter range from 2" to 4"
with EPD< 5000 cm-2 and epi ready surface . Substrate are supplied as per
SEMI standards , but non-
standard thickness and finish are also available ,
depending on your particular application requirement . Germanium wafer is
an excellent semiconductor material and suitable for many thin film and device
applications. We can offer both electronics grade and IR grade Ge wafer to
meet your unique requirement . Contact us for further product information
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Ge Wafer Features : |
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IR optics
Solar cell application
Optical fiber production
Semiconductor and electronics device
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Standard Specifications
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Growth method
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Czochralski
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Diameter ( mm )
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50.8
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76.2
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100
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Thickness ( um )
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500
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500
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525
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Conductivity type
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P - type or N - type
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Dopant available
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Antimony , Gallium , Undoped
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Orientation
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<100> , <111> , <110> , or others
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Off orientation
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From 2° to 10° off
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Resistivity range
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N - type : <=0.4 ohm-cm
P - type : 0.005 ~ 30 ohm-cm
Undoped : >=30 ohm-cm
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Surface finish
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One side or two sides polished
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EPD ( cm-2 )
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<= 5000
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Package method
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Single wafer container with outer foil bag
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