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MgO Wafer
Semiconductor
Wafer, Inc provides
high quality
single crystal
MgO wafer for
making
ferroelectric
thin film ,
high Tc superconductor
as well as
for the growth
of nitride
epitaxial in
max. diameter
up to 2 inch
.We
can offer a
wide range
of
twin
free and defect
free MgO
substrate with
orientation <100> , <110> and
<111> ,
and different
surface finish
from as polished
to as-cleaved
substrates
to meet all
your special
requirements
.
- MgO
Wafer Feature
:
Low
dielectric
loss
Cleavage
plane on the <100>
- MgO
Wafer Application
:
High
Tc Superconductor
Electronics
and optoelectronics
Microwave device
Standard
Single Crystal
MgO Wafer
|
Growth
method
|
Arc
Fusion
|
|
Crystal
structure
|
Cubic
|
|
Orientation
|
<100> , <110> , <111>
|
|
Crystal
cleavage plane
|
<100>
|
|
Dielectric
constant
|
9.8
|
|
Lattice
constant
|
4.212 A
|
|
Size
|
2” x
2” , dia 2” ,
10 x 10 ,
20 x 20 mm
|
|
Thickness
|
0.5
mm ,
1 mm
|
|
Surface
finish
|
As
cut , as polished
, as cleaved
|
|
Surface
roughness
|
< 10
A
|
Top
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