Semiconductor Wafer Inc

 

 

Sapphire Wafer

 
Semiconductor Wafer Inc. provides sapphire wafer with complete orientation
options including C plane , A plane , R plane and M plane , in diameter
range  from 1" to 4" , square substrate is also available as well , size from
10 x 10 mm to 100 x 100 mm . Substrate are produed as per SEMI standards
it has good surface finish Ra < 5A and high cleanliness , SWI can offer epi
ready grade sapphire wafer for your epitaxial growth . Sapphire wafer are
produced by Czochralski method , due to it's high strength, high anti-corrosion
high anti-abrasion , low dielectric loss and good electrical insulation , single
crystal  sapphire wafer plays an increasingly important role as a material for
blue LED and high Tc superconductor and microwave applications. Contact
us for further information on price & delivery time.
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Sapphire Wafer Features :
High working temperature                                                                                       
Good thermal conductivity                                                                                       
Superior mechanical properties                                                                             
High anti corrosion                                                                                                   
Stable dielectric constant & low dielectric loss                                                     
Excellent light transmission                                                                                     
 
Sapphire Wafer Applications :
Blue LED substrate                                                                                                  
Superconductor substrate                                                                                       
Electronics and optoelectronics                                                                             
UV and IR optics                                                                                                       
 
Standard Specifications
Growth method
CZ
Crystal structure
Hexagonal
Orientation

<0001> , <1120> , <1102> ,<1010>
C-plane , A-plane , R-plane , M-plane

Dielectric constant
11.58
Lattice constant
4.77 A
Tolerance of orientation
+/- 0.5 °
Size
10 x 10 mm , 20 x 20 mm , 30 x 30 mm
 2" , 3" , 4"
Other sizes available upon request
Thickness
330 um , 430 um , 0.5 mm or 1 mm
Surface finish
one side or two sides epi polished
Surface roughness
Ra <= 5 A
Package method
Single wafer container or Ampak cassette
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Semiconductor Wafer, Inc.