|
|
|
|
| |
|
Semiconductor Wafer Inc. provides sapphire wafer with complete orientation
options including C plane , A plane , R plane and M plane , in diameter
range from 1" to 4" , square substrate is also available as well , size from
10 x 10 mm
to 100 x 100 mm . Substrate are produed as per SEMI standards
it has good
surface finish Ra < 5A and high cleanliness , SWI can offer epi
ready grade sapphire wafer for your epitaxial growth . Sapphire wafer are
produced by Czochralski method , due to it's high strength, high anti-corrosion
high anti-abrasion , low dielectric loss and good electrical insulation , single
crystal sapphire wafer plays an increasingly important role as a material for
blue LED and high Tc superconductor and microwave applications. Contact
us for further
information on price & delivery time.
.
|
|
| |
|
|
| |
|
Sapphire Wafer Features :
|
|
High working temperature
Good thermal conductivity
Superior mechanical properties
High anti corrosion
Stable dielectric constant & low dielectric loss
Excellent light transmission
|
|
| |
|
Sapphire Wafer Applications :
|
|
Blue LED substrate
Superconductor substrate
Electronics and optoelectronics
UV and IR optics
|
|
| |
|
|
|
Standard Specifications
|
|
Growth method
|
CZ
|
|
Crystal structure
|
Hexagonal
|
|
Orientation
|
<0001> , <1120> , <1102> ,<1010>
C-plane , A-plane , R-plane , M-plane
|
|
Dielectric constant
|
11.58
|
|
Lattice constant
|
4.77 A
|
|
Tolerance of orientation
|
+/- 0.5 °
|
|
Size
|
10 x 10 mm , 20 x 20 mm , 30 x 30 mm
2" , 3" , 4"
Other sizes available upon request
|
|
Thickness
|
330 um , 430 um , 0.5 mm or 1 mm
|
|
Surface finish
|
one side or two sides epi polished
|
|
Surface roughness
|
Ra <= 5 A
|
|
Package method
|
Single wafer container or Ampak cassette
|
|
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
| |
|
