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Semiconductor Wafer, Inc. ( SWI ) provides high quality SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next
generation semiconductor material , with unique electrical properties
and excellent thermal properties , compared to silicon wafer and gallium
arsenide wafer , SiC is more suitable for high temperatureand high power
device .SiC wafer can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished . Please contact us
for more information .
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| SiC Wafer Features : |
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• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
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| SiC Wafer Application : |
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• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes
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| Standard Specifications |
Polytype |
6H-SiC |
4H-SiC |
Crystal Structure |
Hexagonal |
Hexagonal |
Orientation |
on axis <0001> |
on axis <0001> |
Conductivity Type |
N - type |
N - type |
Dopant |
N2 ( Nitrogen ) |
N2 ( Nitrogen ) |
Diameter |
2" |
2" |
Thickness |
330 um |
330 um |
Resistivity |
0.02 ~ 0.1 ohm-cm |
0.012 ~ 0.03 ohm-cm |
Surface finish |
Si face polished |
Si face polished |
TTV |
<=25 um |
<=25 um |
Bandgap |
3.02 eV |
3.1 eV |
Micropipe Density |
<= 30 cm -2 |
<= 30 cm -2 |
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Superior quality of products with reliance is our prime consideration. |
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Feel free to contact us if you need any other assistance about our products . |
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Email : sales.america@semiwafer.com |
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Email : sales.europe@semiwafer.com |
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Email : sales.asia@semiwafer.com |
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Email : sales.taiwan@semiwafer.com |
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