SiC wafer-Silicon carbide-SiC wafer -Silicon carbide supplier

Semiconductor Wafer Inc

SiC Wafer

Semiconductor Wafer, Inc. ( SWI ) provides high quality SiC wafer
( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next generation semiconductor material , with unique electrical properties
and excellent thermal properties , compared to silicon wafer and gallium
arsenide wafer , SiC is more suitable for high temperature and high power
device .SiC wafer can be supplied in diameter 2 inch , both 4-H or 6-H
polytype N-type , Nitrogent doped , and Si face polished . Please contact us
for more information .

SiC Wafer Features :

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

SiC Wafer Application :

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes

Standard Specifications
Polytype	6H-SiC	4H-SiC
Crystal Structure	Hexagonal	Hexagonal
Orientation	on axis <0001>	on axis <0001>
Conductivity Type	N - type	N - type
Dopant	N2 ( Nitrogen )	N2 ( Nitrogen )
Diameter	2"	2"
Thickness	330 um	330 um
Resistivity	0.02 ~ 0.1 ohm-cm	0.012 ~ 0.03 ohm-cm
Surface finish	Si face polished	Si face polished
TTV	<=25 um	<=25 um
Bandgap	3.02 eV	3.1 eV
Micropipe Density	<= 30 cm -2	<= 30 cm -2

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Semiconductor Wafer, Inc.