Semiconductor Wafer Inc

 

SOI Wafer

Semiconductor Wafer Inc ( SWI ) provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensor and CMOS integrated circuit fabrication .

SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . .

SWI can provide SOI wafer in diameter 4" and 6" with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .

 
 
SOI Wafer Advantages :
Ultraflat SOI wafer  
Low stress SOI wafer
Small quantity available   
Customized layer doping and thickness
Fast turn around
 
SOI Wafer Applications :
High-speed / High-temperature ICs 
Low-power / Low-voltage ICs  
Microwave components 
Power device  
MEMS  
 
Standard Specifications
Diameter
4"
6"
Device layer
2 um ~ 300 um
Thickness tolerance
+/-0.5 um ~ +/-2 um
Conductivity type
P - type or N - type
Orientation
<100> , <111> , <110>
Resistivity range
0.001 ~ 10000 ohm-cm
Buried oxide layer
500 A ~ 4 um
Thickness tolerance
+/-5 %
Handle wafer
>= 300 um
Surface finish
Polished
 
 
Superior quality of products with reliance is our prime consideration.
Feel free to contact us if you need any other assistance about our products .
 
Email : sales.america@semiwafer.com
Email : sales.europe@semiwafer.com
Email : sales.asia@semiwafer.com
Email : sales.taiwan@semiwafer.com
Phone : +886-03-592-7585
Fax : +886-03-516-2843
 
 
 
 
 
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