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Semiconductor Wafer Inc provides high quality SOI wafer to MEMS , power
device , and semiconductor industry . SOI wafers are produced by using ion
implantation and wafer bonding technology to achieve thinner and precise
device layer and ensure the bonding quality across the interface of original
silicon wafer . We can provide SOI wafer in diameter 4" and 6" with flexible
thickness and resistivity range to meet your unique SOI requirement .
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SOI Wafer Advantage : |
Ultraflat SOI wafer
Low stress SOI wafer
Small quantity available
Fast turnaround
Customized layer doping and thickness
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SOI Wafer Applications : |
High-speed / High-temperature ICs
Low-power / Low-voltage ICs
Microwave components
Power device
MEMS
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Standard Specifications
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Diameter
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4"
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6"
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Device layer
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2 um ~ 300 um
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Thickness tolerance
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+/-0.5 um ~ +/-2 um
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Conductivity type
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P - type or N - type
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Orientation
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<100> , <111> , <110>
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Resistivity range
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0.001 ~ 10000 ohm-cm
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Buried oxide layer
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500A ~ 4 um
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Thickness tolerance
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+/-5 %
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Handle wafer
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>= 300 um
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Surface finish
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Polished
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