Semiconductor Wafer Inc

 

 

SrTiO3 Wafer

 
Semiconductor Wafer Inc. can provide both single crystal SrTiO3 wafer and   
conductive Nb doped SrTiO3 wafer in max. diameter up to 25 mm . With        
excellent physical and mechanical properties , SrTiO3 has twin free crystal     
structure and it's lattice contant can perfectly match to the common                  
superconductor materials , pure SrTiO3 substrate is the best choice for your  
high Tc superconductor application . and the conductive single crystal Nb       
doped SrTiO3 can be as an electrode for certain thin film and device               
applications . Contact us for more information .                                                    
 
 
SrTiO3 Wafer Feature :
Excellent lattice match to superconductor materials                                            
Superior mechanical properties                                                                             
Stable dielectric constant                                                                                        
Excellent piezoelectric characteristics                                                                   
 
SrTiO3 Wafer Applications :
High Tc superconductor                                                                                           
Microwave filter                                                                                                         
Thin film growth                                                                                                         
 
Standard Single Crystal SrTiO3 Wafer  

 Growth method

Flame fusion ( Verneuil ) method

 Crystal structure

Cubic

 Orientation

<100> , <110> , <111>

 Dielectric constant

300

 Lattice constant

3.905 A

 Size

dia25 , 5 x 5 , 10 x 10 , 20 x 20 mm

 Thickness

0.5 mm , 1 mm

 Surface finish

As cut , one side polished , two sides polished

 Surface roughness

< 10 A

 
Conductive Nb doped SrTiO3 Wafer    
Single crystal SrTiO3 can exhibit electric conductive by doping Nb
( Niobium ) different doped concentration ( 0.1 ~ 1 wt% ) will change
resistivity range from   0.001 to 0.1 ohm-cm , and this will be of benefit to
some thin film growth application . 

Nb doped SrTiO3

Resistivity 
( ohm-cm )

Mobility 
( cm2 / v.s. )

Size available
( mm )

Concentration ( 1.0 wt% )

0.0035
9.0
5 x 5 x 0.5
10 x 10 x 0.5

Concentration ( 0.7 wt% )

0.007

8.5

5 x 5 x 0.5
10 x 10 x 0.5
 
Concentration ( 0.4 wt% )
0.05
8.5
5 x 5 x 0.5
10 x 10 x 0.5

Concentration ( 0.1 wt% )

0.08

6.5

5 x 5 x 0.5
10 x 10 x 0.5
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Semiconductor Wafer, Inc.