Semiconductor Wafer Inc

 

SrTiO3 Wafer

Semiconductor Wafer Inc. can provide both single crystal SrTiO3 wafer and   
conductive Nb doped SrTiO3 wafer in max. diameter up to 25 mm . With        
excellent physical and mechanical properties , SrTiO3 has twin free crystal     
structure and it's lattice contant can perfectly match to the common                  
superconductor materials , pure SrTiO3 substrate is the best choice for your  
high Tc superconductor application . and the conductive single crystal Nb       
doped SrTiO3 can be as an electrode for certain thin film and device               
applications . Contact us for more information .            
 
 
SrTiO3 Wafer Feature :
Excellent lattice match to superconductor materials                                            
Superior mechanical properties                                                                             
Stable dielectric constant                                                                                        
Excellent piezoelectric characteristics                                                                   
 
SrTiO3 Wafer Applications :
High Tc superconductor                                                                                           
Microwave filter                                                                                                         
Thin film growth                                                                                                         
 
Standard Single Crystal SrTiO3 Wafer  
 
Growth method
Flame fusion ( Verneuil ) method
 
Crystal structure
Cubic
 
Orientation
<100> , <110> , <111>
 
Dielectric constant
300
 
Lattice constant
3.905 A
 
Size
dia25 , 5 x 5 , 10 x 10 , 20 x 20 mm
 
Thickness
0.5 mm , 1 mm
 
Surface finish
As cut , one side polished , two sides polished
 
Surface roughness
< 10 A
 
Conductive Nb doped SrTiO3 Wafer    
Single crystal SrTiO3 can exhibit electric conductive by doping Nb
( Niobium ) different doped concentration ( 0.1 ~ 1 wt% ) will change
resistivity range from   0.001 to 0.1 ohm-cm , and this will be of benefit to
some thin film growth application . 

Nb doped SrTiO3

Resistivity 
( ohm-cm )

Mobility 
( cm2 / v.s. )

Size available
( mm )

Concentration ( 1.0 wt% )

0.0035
9.0
5 x 5 x 0.5
10 x 10 x 0.5

Concentration ( 0.7 wt% )

0.007

8.5

5 x 5 x 0.5
10 x 10 x 0.5
 
Concentration ( 0.4 wt% )
0.05
8.5
5 x 5 x 0.5
10 x 10 x 0.5

Concentration ( 0.1 wt% )

0.08

6.5

5 x 5 x 0.5
10 x 10 x 0.5
 
 
Superior quality of products with reliance is our prime consideration.
Feel free to contact us if you need any other assistance about our products .
 
Email : sales.america@semiwafer.com
Email : sales.europe@semiwafer.com
Email : sales.asia@semiwafer.com
Email : sales.taiwan@semiwafer.com
Phone : +886-03-592-7585
Fax : +886-03-516-2843
 
 
 
 
 
Copyright ©2011 Semiconductor Wafer, Inc All Right Reserved .